| PART |
Description |
Maker |
| STK5434 STK5422 STK5361L STK5362 |
Metal Oxide Varistor (MOV); Voltage Rating AC, Vrms:115Vrms; Voltage Rating DC, Vdc:153VDC; Peak Surge Current (8/20uS), Itm:4500A; Clamping Voltage 8/20us Max :300V; Peak Energy (10/1000uS):35J; Capacitance, Cd:1100pF
Varistor; Voltage Rating AC, Vrms:105Vrms; Voltage Rating DC, Vdc:144VDC; Peak Surge Current (8/20uS), Itm:100A; Clamping Voltage 8/20us Max :310V; Peak Energy (10/1000uS):0.6J; Capacitance, Cd:27pF; Package/Case:3mm Axial
Metal Oxide Varistor (MOV); Voltage Rating AC, Vrms:175Vrms; Voltage Rating DC, Vdc:225VDC; Peak Surge Current (8/20uS), Itm:6500A; Clamping Voltage 8/20us Max :455V; Peak Energy (10/1000uS):90J; Capacitance, Cd:1400pF 模拟IC
|
Littelfuse, Inc.
|
| BUV94 BUV95 BDY46 |
RDS/RBDS processor
Metal Oxide Varistor (MOV); Voltage Rating AC, Vrms:660Vrms; Voltage Rating DC, Vdc:850VDC; Peak Surge Current (8/20uS), Itm:6500A; Clamping Voltage 8/20us Max :1650V; Peak Energy (10/1000uS):250J; Capacitance, Cd:400pF
|
|
| BDX95 |
Metal Oxide Varistor (MOV); Voltage Rating AC, Vrms:320Vrms; Voltage Rating DC, Vdc:420VDC; Peak Surge Current (8/20uS), Itm:4500A; Clamping Voltage 8/20us Max :850V; Peak Energy (10/1000uS):80J; Capacitance, Cd:380pF
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package
|
Seme LAB
|
| NEZ7785-4D NEZ7785-4DD NEZ7785-8D NEZ7785-8DD NEZ4 |
4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET 4W/8W C波段砷化镓场效应管N沟道砷化镓场效应晶体
CAP 15UF 16V 10% TANT SMD-6032-28 TR-7
CAP TANTALUM 1.5UF 35V 10% SMD
20 characters x 4 Lines, 5x7 Dot Matric Character and Cursor
VARISTOR, 300VAC; Series:VE; Voltage rating, AC:300V; Suppressor type:Varistors; Voltage rating, DC:385V; Current, Peak Pulse IPP @ 8/20uS:2500A; Voltage, clamping 8/20us max:775V; Energy, transient 10/1000us max:45J; RoHS Compliant: Yes
|
NEC, Corp.
NEC Corp.
NEC[NEC]
http://
|
| MDE-34S951K MDE-34S911K |
950V; max peak current:40000A; Tmax=13; metal oxide varistor. High energy series 34mm single square
910V; max peak current:40000A; Tmax=13; metal oxide varistor. High energy series 34mm single square
|
MDE Semiconductor
|
| MDE-53D951K |
950V; max peak current:70000A; metal oxide varistor. High energy series 53mm single disc
|
MDE Semiconductor
|
| BT138-600 BT138 |
600V Vdrm 12A Triac, 1.65V Peak On-State Voltage, 2.0mA Repetitive Peak Off-State Current
Bi-Directional Triode Thyristor
|
SemiWell Semiconductor
|
| BF620 BF622 |
Low current (max. 50 mA) High voltage (max. 300 V).peak base current IBM 50 mA
|
TY Semiconductor Co., Ltd
|
| NTE5869 NTE5850 NTE5866 NTE5861 NTE5863 NTE5862 NT |
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 400V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 200V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 100V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 50V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 300V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 500V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 800V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 800V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 600V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 600V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 500V. Average forward current 6A.
Silicon Power Rectifier Diode 6 Amp
Silicon Power Rectifier Diode, 6 Amp
Silicon Power Rectifier Diode / 6 Amp
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 400V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 100V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 200V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 300V. Average forward current 6A.
|
NTE[NTE Electronics]
|
| MAX5910 MAX5910ESA MAX5917BESE MAX5917 MAX5917AESE |
65V Simple Swapper Hot-Swap Switches 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO16
65V Hot Swap Switch
|
Maxim Integrated Products, Inc.
MAXIM[Maxim Integrated Products]
MAXIM - Dallas Semiconductor
|
| TNY279GN-TL TNY274 TNY27409 TNY277PN TNY274PG TNY2 |
Energy Efficient, Off-Line Switcher with Enhanced Flexibility and Extended Power Range 0.709 A SWITCHING REGULATOR, 140 kHz SWITCHING FREQ-MAX, PDSO7
Energy-Effi cient, Off-Line Switcher With Enhanced Flexibility and Extended Power Range
Energy Efficient, Off-Line Switcher with Enhanced Flexibility and Extended Power Range 0.481 A SWITCHING REGULATOR, 140 kHz SWITCHING FREQ-MAX, PDIP7
0.267 A SWITCHING REGULATOR, PDIP7
Energy-Effi cient, Off-Line Switcher With Enhanced Flexibility and Extended Power Range
|
Power Integrations, Inc.
POWER INTEGRATIONS INC
Power Integrations, Inc...
|
| MIC4421A MIC4421AAM MIC4421ABM MIC4421ABN MIC4421A |
High peak-output current: 9A Peak (typ.)
9A Peak Low-Side MOSFET Driver Bipolar/CMOS/DMOS Process
|
MIC GROUP RECTIFIERS
Micrel Semiconductor
|
